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MRF8S18210WHSr3 mrf8s18210wghsr3 1 rf device data freescale semiconductor, inc. rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for cdma base station applications with frequencies from1805 mhz to 1995 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =30volts,i dq = 1300 ma, p out = 50 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 1930 mhz 17.8 29.2 7.0 --34.2 1960 mhz 17.8 28.2 7.0 --34.4 1995 mhz 18.1 27.6 7.1 --34.3 ? capable of handling 10:1 vswr, @ 32 vdc, 1840 mhz, 268 watts cw (1) output power (3 db input overdrive from rated p out ) ? typical p out @ 1 db compression point ? 210 watts cw 1800 mhz ? typical single--carrier w--cdma performance: v dd =30volts,i dq = 1300 ma, p out = 50 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 1805 mhz 18.2 30.1 7.3 --35.1 1840 mhz 18.1 29.1 7.4 --35.4 1880 mhz 18.2 27.8 7.4 --35.9 features ? designed for wide instantaneous bandwidth applications ? designed for wideband applications that require 40 mhz signal bandwidth ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. for r5 tape and reel option, see p. 17. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 125 c operating junction temperature (2,3) t j 225 c cw operation @ t c =25 c derate above 25 c cw 239 1.44 w w/ c 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 2. continuous use at maximum temperature will affect mttf. 3. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. document number: MRF8S18210WHS rev. 0, 4/2012 freescale semiconductor technical data 1805 mhz -- 1995 mhz 50 w avg., 30 v single w--cdma lateral n--channel rf power mosfets MRF8S18210WHSr3 mrf8s18210wghsr3 ni--880xs--2 MRF8S18210WHSr3 ni--880xs--2 gull mrf8s18210wghsr3 figure 1. pin connections (top view) rf out /v ds 21 rf in /v gs ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MRF8S18210WHSr3 mrf8s18210wghsr3 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 81 c, 50 w cw, 30 vdc, i dq = 1300 ma, 1840 mhz case temperature 101 c, 210 w cw (3) ,30vdc,i dq = 1300 ma, 1840 mhz r jc 0.48 0.44 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =30vdc,v gs =0vdc) i dss ? ? 5 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 306 adc) v gs(th) 1.2 1.9 2.7 vdc gate quiescent voltage (v dd =30vdc,i d = 1300 madc, measured in functional test) v gs(q) 2.0 2.7 3.5 vdc drain--source on--voltage (v gs =10vdc,i d =3.06adc) v ds(on) 0.1 0.24 0.3 vdc functional tests (4,5) (in freescale test fixture, 50 ohm system) v dd =30vdc,i dq = 1300 ma, p out = 50 w avg., f = 1930 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 17.0 17.8 20.0 db drain efficiency d 26.0 29.2 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.7 7.0 ? db adjacent channel power ratio acpr ? --34.2 --30.0 dbc input return loss irl ? -- 9 -- 7 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =30vdc,i dq = 1300 ma, p out =50wavg., single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 1930 mhz 17.8 29.2 7.0 --34.2 -- 9 1960 mhz 17.8 28.2 7.0 --34.4 -- 9 1995 mhz 18.1 27.6 7.1 --34.3 -- 1 3 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 3. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 4. part internally matched both on input and output. 5. measurement made with device in str aight lead configuration before any lead forming operation is applied . (continued)
MRF8S18210WHSr3 mrf8s18210wghsr3 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performance (in freescale test fixture, 50 ohm system) v dd =30vdc,i dq = 1300 ma, 1930 mhz -- 1995 mhz bandwidth p out @ 1 db compression point, cw p1db ? 210 ? w imd symmetry @ 80 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 12 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 100 ? mhz gain flatness in 65 mhz bandwidth @ p out =50wavg. g f ? 0.14 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.02 ? db/ c output power variation over temperature (--30 cto+85 c) (1) ? p1db ? 0.008 ? db/ c typical broadband performance ? 1800 mhz (in freescale 1800 mhz test fixture, 50 ohm system) v dd =30vdc,i dq = 1300 ma, p out = 50 w avg., single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 1805 mhz 18.2 30.1 7.3 --35.1 -- 1 0 1840 mhz 18.1 29.1 7.4 --35.4 -- 9 1880 mhz 18.2 27.8 7.4 --35.9 -- 1 0 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor, inc. MRF8S18210WHSr3 mrf8s18210wghsr3 figure 2. mrf8s18210w hsr3(wghsr3) test circuit component layout mrf8s18210hs/b rev. 0 cut out area c1 c15* c9 r1 c16 c17 c2 c10 r2 c8 c6 c4 c14* c12* c18* c19* c20* c21* c13* c11* c3 c5 c7 c22 *c11, c12, c13, c14, c15, c18, c19, c20, and c21 are mounted vertically. table 5. MRF8S18210WHSr3(wghsr3) test ci rcuit component designations and values part description part number manufacturer c1, c2 2.2 f chip capacitors c3225x7r2a225m tdk c3, c4, c5, c6, c7, c8 10 f chip capacitors c5750x7s2a106mt tdk c9, c10, c11, c12, c13, c14 8.2 pf chip capacitors atc100b8r2bt500xt atc c15 1.3 pf chip capacitor atc100b1r3bt500xt atc c16, c21 1.8 pf chip capacitors atc100b1r8bt500xt atc c17 2.0 pf chip capacitor atc100b2r0bt500xt atc c18, c19 3.9 pf chip capacitors atc100b3r9bt500xt atc c20 1.0 pf chip capacitor atc100b1r0bt500xt atc c22 470 f, 63 v electrolytic capacitor b41858-c8477-m000 epcos r1, r2 10 ? , 1/4 w chip resistors 232272461009 phycomp pcb 0.020 , r =3.5 ro4350b rogers
MRF8S18210WHSr3 mrf8s18210wghsr3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) 1880 irl g ps acpr f, frequency (mhz) figure 3. output peak--to--average ratio compression (parc) broadband performance @ p out = 50 watts avg. -- 4 0 0 -- 1 0 -- 2 0 -- 3 0 16.4 18.4 18.2 18 -- 3 7 32 30 28 26 -- 3 2 -- 3 3 -- 3 4 -- 3 5 d , drain efficiency (%) d g ps , power gain (db) 17.8 17.6 17.4 17.2 17 16.8 16.6 1900 1920 1940 1960 1980 2000 2020 2040 -- 3 1 -- 3 6 -- 5 0 parc parc (db) -- 3 . 6 -- 2 . 8 -- 3 -- 3 . 2 -- 3 . 4 -- 3 . 8 acpr (dbc) v dd =30vdc,p out =50w(avg.),i dq = 1300 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 7 0 -- 2 0 -- 3 0 -- 4 0 -- 6 0 1 100 imd, intermodulatio n distortion (dbc) -- 5 0 figure 5. output peak--to--average ratio compression (parc) versus output power 0 p out , output power (watts) -- 2 -- 4 -- 6 30 -- 1 -- 3 -- 5 output compression at 0.01% probability on ccdf (db) 10 50 70 110 10 70 60 50 40 30 20 d , drain efficiency (%) -- 1 d b = 2 5 w -- 2 d b = 3 5 w -- 3 d b = 4 8 w 90 v dd =30vdc,i dq = 1300 ma, f = 1960 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf d acpr parc acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 19 g ps , power gain (db) 18.5 18 17.5 17 16.5 16 g ps 300 v dd =30vdc,p out = 80 w (pep) i dq = 1300 ma two--tone measurements (f1 + f2)/2 = center frequency of 1960 mhz im3--u im5--u im5--l im5--l im7--l im7--u im3--l
6 rf device data freescale semiconductor, inc. MRF8S18210WHSr3 mrf8s18210wghsr3 typical characteristics 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 14 20 0 60 50 40 30 20 d , drain efficiency (%) g ps , power gain (db) 19 18 10 100 300 10 -- 6 0 acpr (dbc) 17 16 15 0 -- 3 0 -- 4 0 -- 5 0 figure 7. broadband frequency response 13.5 19.5 1830 f, frequency (mhz) v dd =30vdc p in =0dbm i dq = 1300 ma 17.5 16.5 15.5 1860 gain (db) 18.5 gain 1890 1920 1950 1980 2010 2040 2070 irl -- 2 5 5 0 -- 5 -- 1 0 -- 1 5 irl, input return loss (db) 14.5 --20 1930 mhz v dd =30vdc,i dq = 1300 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf acpr g ps 1930 mhz 1960 mhz 1995 mhz 1960 mhz 1930 mhz 1960 mhz 1995 mhz 1995 mhz d w--cdma test signal peak--to--average (db) figure 8. ccdf w--cdma iq magnitude clipping, single--carrier test signal -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 9. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 10 0.0001 100 0 10 1 0.1 0.01 0.001 2468 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 9.9 db @ 0.01% probabilit y on ccdf input signal 12
MRF8S18210WHSr3 mrf8s18210wghsr3 7 rf device data freescale semiconductor, inc. v dd =30vdc,i dq = 1300 ma, p out =50wavg. f mhz z source ? z load ? 1880 3.52 -- j5.54 3.50 -- j2.60 1900 3.71 -- j4.76 3.42 -- j2.64 1920 3.97 -- j3.96 3.33 -- j2.67 1940 4.31 -- j3.15 3.23 -- j2.69 1960 4.76 -- j2.29 3.13 -- j2.71 1980 5.33 -- j1.40 3.02 -- j2.71 2000 6.08 -- j0.48 2.89 -- j2.71 2020 7.08 + j0.47 2.77 -- j2.71 2040 8.39 + j1.41 2.64 -- j2.69 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 10. series equivalent source and load impedance input matching network device under test output matching network z source z load
8 rf device data freescale semiconductor, inc. MRF8S18210WHSr3 mrf8s18210wghsr3 v dd =30vdc,i dq = 1300 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max output power p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 1930 5.06 -- j7.33 2.07 -- j3.37 54.3 269 49.2 55.2 331 51.2 1960 10.2 -- j6.91 2.14 -- j3.42 54.2 263 48.7 55.1 324 50.8 1995 13.1 -- j0.18 2.39 -- j3.53 54.1 257 48.5 55.0 316 49.7 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 11. load pull performance ? maximum p1db tuning input load pull tuner device under test output load pull tuner z source z load v dd =30vdc,i dq = 1300 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max drain efficiency p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 1930 5.06 -- j7.33 2.44 -- j1.46 52.7 186 58.9 53.4 219 61.4 1960 10.2 -- j6.91 2.23 -- j1.55 52.6 182 57.8 53.5 224 60.3 1995 13.1 -- j0.18 2.31 -- j1.63 52.6 182 56.6 53.3 214 59.8 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 12. load pull performance ? maximum drain efficiency tuning input load pull tuner device under test output load pull tuner z source z load
MRF8S18210WHSr3 mrf8s18210wghsr3 9 rf device data freescale semiconductor, inc. figure 13. MRF8S18210WHSr3(wgh sr3) test circuit component layout ? 1805 mhz -- 1880 mhz mrf8s18210hs/b rev. 0 cut out area c1 c15* c9 r1 c16 c17 c2 c10 r2 c8 c6 c4 c14* c12* c20* c21* c22 c23 c13* c11* c3 c5 c7 c24 c18 c19 *c11, c12, c13, c14, c15, c20, and c21 are mounted vertically. table 6. MRF8S18210WHSr3(wghsr3) test circuit component designati ons and values ? 1805 mhz -- 1880 mhz part description part number manufacturer c1, c2 2.2 f chip capacitors c3225x7r2a225m tdk c3, c4, c5, c6, c7, c8 10 f chip capacitors c5750x7s2a106mt tdk c9, c10, c11, c12, c13, c14 8.2 pf chip capacitors atc100b8r2bt500xt atc c15 10 pf chip capacitor atc100b10r0bt500xt atc c16, c17 2.2 pf chip capacitors atc100b2r2bt500xt atc c18, c19, c22 0.8 pf chip capacitors atc100b0r8bt500xt atc c20, c21 3.9 pf chip capacitors atc100b3r9bt500xt atc c23 1.8 pf chip capacitor atc100b1r8bt500xt atc c24 470 f, 63 v electrolytic capacitor b41858-c8477-m000 epcos r1, r2 10 ? , 1/4 w chip resistors 232272461009 phycomp pcb 0.020 , r =3.5 ro4350b rogers
10 rf device data freescale semiconductor, inc. MRF8S18210WHSr3 mrf8s18210wghsr3 typical characteristics ? 1805 mhz -- 1880 mhz irl, input return loss (db) 1760 irl g ps acpr f, frequency (mhz) figure 14. output peak--to--average ratio compression (parc) broadband performance @ p out = 50 watts avg. -- 1 5 -- 3 -- 6 -- 9 -- 1 2 16.0 21.0 20.5 20.0 -- 4 0 40 35 30 25 -- 3 5 -- 3 6 -- 3 7 -- 3 8 d , drain efficiency (%) g ps , power gain (db) 19.5 19.0 18.5 18.0 17.5 17.0 16.5 1780 1800 1820 1840 1860 1880 1900 1920 20 -- 3 9 -- 1 8 parc parc (db) -- 3 . 6 -- 2 -- 2 . 4 -- 2 . 8 -- 3 . 2 -- 4 acpr (dbc) v dd =30vdc,p out =50w(avg.),i dq = 1300 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf 1 g ps acpr p out , output power (watts) avg. figure 15. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 14 20 0 60 50 40 30 20 d , drain efficiency (%) g ps , power gain (db) 19 18 10 100 300 10 -- 6 0 acpr (dbc) 17 16 15 0 -- 3 0 -- 4 0 -- 5 0 v dd =30vdc,i dq = 1300 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf figure 16. broadband frequency response 14 20 1600 f, frequency (mhz) v dd =30vdc p in =0dbm i dq = 1300 ma 18 17 16 1650 gain (db) 19 gain 1700 1750 1800 1850 1900 1950 2000 irl -- 2 0 10 5 0 -- 5 -- 1 0 irl, input return loss (db) 15 --15 1805 mhz d 1840 mhz 1880 mhz 1840 mhz 1805 mhz 1880 mhz 1805 mhz 1840 mhz 1880 mhz d
MRF8S18210WHSr3 mrf8s18210wghsr3 11 rf device data freescale semiconductor, inc. v dd =30vdc,i dq = 1300 ma, p out =50wavg. f mhz z source ? z load ? 1760 1.81 -- j4.25 3.09 -- j2.28 1780 1.95 -- j4.06 2.97 -- j2.29 1800 2.13 -- j3.89 2.85 -- j2.29 1820 2.35 -- j3.77 2.71 -- j2.28 1840 2.61 -- j3.70 2.58 -- j2.25 1860 2.91 -- j3.74 2.45 -- j2.21 1880 3.19 -- j3.90 2.32 -- j2.16 1900 3.41 -- j4.21 2.19 -- j2.10 1920 3.48 -- j4.64 2.06 -- j2.03 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 17. series equivalent source and load impedance ? 1805 mhz -- 1880 mhz input matching network device under test output matching network z source z load
12 rf device data freescale semiconductor, inc. MRF8S18210WHSr3 mrf8s18210wghsr3 v dd =30vdc,i dq = 1300 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max output power p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 1805 0.79 -- j4.26 1.77 -- j2.83 54.4 275 50.5 55.3 339 52.0 1840 1.34 -- j5.03 1.83 -- j2.96 54.5 282 50.8 55.3 339 52.2 1880 2.15 -- j5.84 1.89 -- j2.98 54.4 275 51.0 55.3 339 51.8 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 18. load pull performance ? maximum p1db tuning ? 1805 mhz -- 1880 mhz input load pull tuner device under test output load pull tuner z source z load v dd =30vdc,i dq = 1300 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max drain efficiency p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 1805 0.79 -- j4.26 3.02 -- j1.55 53.0 200 59.6 53.4 219 62.5 1840 1.34 -- j5.03 2.64 -- j1.20 52.8 191 60.7 53.5 224 63.0 1880 2.15 -- j5.84 2.40 -- j1.51 53.1 204 59.7 53.2 209 62.2 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 19. load pull performance ? maximum drain efficiency tuning ? 1805 mhz -- 1880 mhz input load pull tuner device under test output load pull tuner z source z load
MRF8S18210WHSr3 mrf8s18210wghsr3 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. MRF8S18210WHSr3 mrf8s18210wghsr3
MRF8S18210WHSr3 mrf8s18210wghsr3 15 rf device data freescale semiconductor, inc.
16 rf device data freescale semiconductor, inc. MRF8S18210WHSr3 mrf8s18210wghsr3
MRF8S18210WHSr3 mrf8s18210wghsr3 17 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option r5 suffix = 50 units, 56 mm tape width, 13 inch reel. the r5 tape and reel option for MRF8S18210WHS and mrf8s18210wghs parts will be available for 2 years after release of MRF8S18210WHS and mrf8s18210wghs freescale semiconductor, inc. reserves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased these devices in the r5 tape and reel option will be offered MRF8S18210WHS and mrf8s18210wghs in the r3 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 apr. 2012 ? initial release of data sheet
18 rf device data freescale semiconductor, inc. MRF8S18210WHSr3 mrf8s18210wghsr3 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/freescale/docs/termsandconditions.htm. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: MRF8S18210WHS rev. 0, 4/2012

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